irfr/u3303 hexfet ? power mosfet v dss = 30v r ds(on) = 0.031 w i d = 33a ? parameter typ. max. units r q jc junction-to-case ??? 2.2 r q ja junction-to-ambient (pcb mount)** ??? 50 c/w r q ja junction-to-ambient ??? 110 thermal resistance d -pak to-252aa i-pak to-251aa l ultra low on-resistance l surface mount (IRFR3303) l straight lead (irfu3033) l advanced process technology l fast switching l fully avalanche rated description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 33 ? i d @ t c = 100c continuous drain current, v gs @ 10v 21 ? a i dm pulsed drain current ? 120 p d @t c = 25c power dissipation 57 w linear derating factor 0.45 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 95 mj i ar avalanche current ? 18 a e ar repetitive avalanche energy ? 5.7 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. s d g irl2203n www.freescale.net.cn 1 / 10
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.032 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.031 w v gs = 10v, i d = 18a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 9.3 CCC CCC s v ds = 25v, i d = 18a CCC CCC 25 a v ds = 30v, v gs = 0v CCC CCC 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 29 i d = 18a q gs gate-to-source charge CCC CCC 7.3 nc v ds = 24v q gd gate-to-drain ("miller") charge CCC CCC 13 v gs = 10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 11 CCC v dd = 15v t r rise time CCC 99 CCC i d = 18a t d(off) turn-off delay time CCC 16 CCC r g = 13 w t f fall time CCC 28 CCC r d = 0.8 w, see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact ? c iss input capacitance CCC 750 CCC v gs = 0v c oss output capacitance CCC 400 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 140 CCC ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC i gss ns 4.5 7.5 i dss drain-to-source leakage current source-drain ratings and characteristics parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 18a, v gs = 0v ? t rr reverse recovery time CCC 53 80 ns t j = 25c, i f = 18a q rr reverse recoverycharge CCC 94 140 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) 33 ? 120 a notes: ? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact ? starting t j = 25c, l = 590h r g = 25 w , i as = 18a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 18a, di/dt 140a/s, v dd v (br)dss , t j 150c ? pulse width 300s; duty cycle 2%. s d g s d g ? caculated continuous current based on maximum allowable junction temperature; package limitation current = 20a. irfr/u3303 www.freescale.net.cn 2 / 10
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 30a 0.1 1 10 100 4 5 6 7 8 9 10 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 15v irfr/u3303 www.freescale.net.cn 3 / 10
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 5 10 15 20 25 30 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 18a v = 15v ds v = 24v ds 1 10 100 0 200 400 600 800 1000 1200 1400 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss irfr/u3303 www.freescale.net.cn 4 / 10
fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) irfr/u3303 www.freescale.net.cn 5 / 10
fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms v ds l d.u.t. v dd i as t p 0.01 w r g + - t p v ds i as v dd v (br)dss 10 v q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 13b. gate charge test circuit 10 v 25 50 75 100 125 150 0 50 100 150 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.0a 11a 18a irfr/u3303 www.freescale.net.cn 6 / 10
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - * v gs = 5v for logic level devices ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * fig 14. for n-channel hexfets peak diode recovery dv/dt test circuit irfr/u3303 www.freescale.net.cn 7 / 10
package outline to-252aa outline dimensions are shown in millimeters (inches) to-252aa (d-pak) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min . 0.58 (.023) 0.46 (.018) lead assignments 1 - g at e 2 - d r a in 3 - s ou r ce 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before sold er dip, solder dip max. +0.16 (.006). international rect ifier assembly l o t code example : this is an irfr120 w ith assembly lot code 9u1p first portion of part number second portion of part number 120 irfr 9 u 1p a irfr/u3303 www.freescale.net.cn 8 / 10
package outline to-251aa outline dimensions are shown in millimeters (inches) to-251aa (i-pak) part marking information inte rnatio nal rectifier assembly lo t co de first portion of part number second portion of part number 120 9u 1 p example : this is an irfu120 w ith assembly lo t co de 9u1p irfu 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g at e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) irfr/u3303 www.freescale.net.cn 9 / 10
tape & reel information to-252aa tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1. contro lling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline con for ms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inc h irfr/u3303 www.freescale.net.cn 10 / 10
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